Fine-structure N-polarity InNInGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Che, Song Bek ^a   Terashima, Wataru ^a   Ishitani, Yoshihiro ^a   Yoshikawa, Akihiko ^a   Matsuda, Takeyoshi ^b   Ishii, Hirotatsu ^b   Yoshida, Seikoh ^b  

^a CHIBA UNIVERSITY   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT MODULATORS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HETEROINTERFACES; LATTICE MISMATCH; NEAR-INFARRED LIGHT EMITTERS; OPTICAL COMMUNICATION DEVICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 22144463868     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1954877     Document Type: Article

References (14)

1. K. Xu and A. Yoshikawa, Appl. Phys. Lett. 83, 251 (2003).
2. Y. Ishitani, K. Xu, S. B. Che, H. Masuyama, W. Terasima, M. Yoshitani, N. Hashimoto, K. Akasaka, T. Ohkubo, and A. Yoshikawa, Phys. Status Solidi B 241, 2849 (2004).
3. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. 94, 4457 (2003).
4. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
5. Y. Nanishi, Y. Saito, T. Yamaguchi, T. Araki, T. Miyajima, and H. Naoi, Phys. Status Solidi C 1, 1487 (2004).
6. S. B. Che, W. Terashima, T. Ohkubo, M. Yoshitani, N. Hashimoto, K. Akasaka, Y. Ishitani, and A. Yoshikawa, Phys. Status Solidi C 2, 2258 (2005). (Proceedings of International Workshop on Nitride Semiconductors, Pittsburgh, PA, 19-23 July, B9.4).
7. S. B. Che, W. Terashima, T. Ohkubo, M. Yoshitani, N. Hashimoto, K. Akasaka, Y. Ishitani, and A. Yoshikawa, Phys. Status Solidi C 2, 2258 (2005). (Proceedings of International Workshop on Nitride Semiconductors, Pittsburgh, PA, 19-23 July, B9.4).
8. T. Ohashi, T. Kouno, M. Kawai, A. Kikuchi, and K. Kishino, Phys. Status Solidi A 201, 2850 (2004).
9. V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, Phys. Status Solidi B 234, 787 (2002).
10. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 31, L1454 (1992).
11. W. Paszkowicz, Powder Diffr. 14, 258 (1999).
12. A. Fisher, H. Kühne, and H. Richter, Phys. Rev. Lett. 73, 2712 (1994).
13. Y. Ishitani, H. Masuyama, W. Terasima, M. Yoshitani, S. B. Che, and A. Yoshikawa, Phys. Status Solidi B 2, 2276 (2005).
14. W. Lü, D. B. Li, C. R. Li, F. Shen, and Z. Zhang, J. Appl. Phys. 95, 4362 (2004).