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Volumn , Issue 7, 2003, Pages 2830-2833
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Effect of growth interruption on In-rich InGaN/GaN single quantum well structures
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Author keywords
[No Author keywords available]
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Indexed keywords
CROSS-SECTIONAL TEM;
DISLOCATION DENSITIES;
GROWTH INTERRUPTION;
HIGH GROWTH TEMPERATURES;
MASS-TRANSPORT PROCESS;
QUANTUM WELL STRUCTURES;
SINGLE QUANTUM WELL STRUCTURES;
STRUCTURAL MEASUREMENTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NITRIDES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 20644440810
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303451 Document Type: Conference Paper |
Times cited : (18)
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References (10)
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