Ambipolar carrier injection characteristics of erbium-silicided n-type schottky barrier metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 730-732

  Jang, Moongyu ^a   Kim, Yarkyeon ^a   Jeon, Myungsim ^a   Choi, Cheljong ^a   Park, Byoungchul ^a,b   Lee, Seongjae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Ambipolar carrier injection; Erbium suicide; Modeling; SB MOSFETs; Schottky barrier

Indexed keywords

LEAKAGE CURRENTS; MOS DEVICES; SCHOTTKY BARRIER DIODES;

ERBIUM SUICIDE; MODELING;

FIELD EFFECT TRANSISTORS;

EID: 32244441471     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.45.730     Document Type: Article

References (13)

1. L. E. Calvet, H. Luebben, M. A. Reed, C. Wang, J. P. Snyder and J. R. Tucker: J. Appl. Phys. 91 (2002) 757.
2. H. C. Lin, M. F. Wang, F. J. Hou, J. T. Liu, T. Y. Huang and S. M. Sze: Jpn. J. Appl. Phys. 41 (2002) L626.
3. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. J. King and C. Hu: Tech. Dig. 1EDM, 2000, p. 57.
4. M. Jang, K. Kang, S. Lee and K. Park: Appl. Phys. Lett. 82 (2003) 2718.
5. M. Jang, Y. Kim, J. Shin, S. Lee and K. Park: Appl. Phys. Lett. 84 (2004) 741.
6. M. Radosavljevic, S. Heinze, J. Tersoff and Ph. Avouris: Appl. Phys. Lett. 83 (2003) 2435.
7. J. Clifford and D. L. Palfrey: IEEE Trans. Nanotechnol. 2 (2003) 175.
8. W. Saitoh, A, Itoh, S. Yamagami and M. Asada: Jpn. J. Appl. Phys. 38 (1999) 6226.
9. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981) p. 469.
10. Y. Tsividis: Operation and Modeling of the MOS Transistor (McGraw-Hill. New York, 1999) p. 336.
11. S. Vandre, T. Kalka, C. Preinesberger and M. Dahne-Prietsch: Phys. Rev. Lett. 82 (1999) 1927.
12. S. Wolf: Silicon Proc. VLSI Era (Lattice Press, California, 1995) Vol. 3, p. 198.
13. M. Jang, Y. Kim, J. Shin and S. Lee: IEEE Electron Device Lett. 26 (2005) 354.