GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 853-856

  Harmand, J C ^a   Tchernycheva, M ^a   Patriarche, G ^a   Travers, L ^a   Glas, F ^a   Cirlin, G ^b,c  

^a UNIV PARIS SUD   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c Physico Technical Centre of Science and Education   (Russian Federation)

Author keywords

A1. Crystal structure; A1. Nanostructures; A3. Liquid phase epitaxy; A3. Molecular beam epitaxy; A3. Semiconducting III V materials

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; GROWTH TEMPERATURE; HIGH ENERGY ELECTRON DIFFRACTION; LIQUID PHASE EPITAXY; MELTING POINT; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE;

LIQUID PHASES; NANOWIRE GROWTH; SEMICONDUCTING III-V MATERIALS;

NANOWIRES;

EID: 33947330741     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.106     Document Type: Article

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