Optimization of Au-assisted InAs nanowires grown by MOVPE

Journal of Crystal Growth

Volumn 297, Issue 2, 2006, Pages 326-333

  Dick, Kimberly A ^a   Deppert, Knut ^a   Samuelson, Lars ^a   Seifert, Werner ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V material

Indexed keywords

ELECTRON MOBILITY; ENERGY GAP; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PARTICLE SIZE ANALYSIS; SEMICONDUCTING INDIUM COMPOUNDS;

GROWTH TEMPERATURE; NANOWIRES; PRESSURE-DEPENDENT INTRINSIC DOPING; SEMICONDUCTING III-V MATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 33845570513     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.054     Document Type: Article

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