Growth mechanisms for GaAs nanowires grown in CBE

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 167-174

  Persson, A I ^a   Ohlsson, B J ^a   Jeppesen, S ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

A1. Nanostructures; A1. Surface processes; A3. Chemical beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; ETCHING; HYDROCHLORIC ACID; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE PHENOMENA; THERMAL EFFECTS; TWO DIMENSIONAL;

NANOSTRUCTURE; SELECTIVE EPITAXY; SURFACE PROCESSES; SURFACE-SELECTIVE GROWTH (SSG); VAPOR-LIQUID-SOLID (VLS) GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 9944245396     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.106     Document Type: Conference Paper

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