Growth of gallium antimonide (GaSb) by metalorganic chemical vapor deposition

Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 1996, Pages 426-429

  Subekti, Agus ^a   Goldys, E M ^a   Tansley, Trevor L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ANTIMONIDE; HOLE DENSITY; TRIMETHYLANTIMONIDE; TRIMETHYLGALLIUM;

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030353924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)