Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy

Electronics Letters

Volumn 32, Issue 3, 1996, Pages 267-269

  Passlack, M ^a,b   Hong, M ^a   Mannaerts, J P ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Phoenix Corporation Research Laboratories   (United States)

Author keywords

Gallium arsenide; Molecular beam epitaxial growth

Indexed keywords

CAPACITANCE MEASUREMENT; DEPOSITION; ELECTRON BEAMS; EVAPORATION; MOLECULAR BEAM EPITAXY; OXIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; VOLTAGE MEASUREMENT;

ELECTRON BEAM EVAPORATION; GALLIUM OXIDE; INVERSION LAYERS; SINGLE CRYSTAL SOURCE;

INTERFACES (MATERIALS);

EID: 0030085927     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960125     Document Type: Article

References (14)

1. MEINERS, L.G., LILLE, D.L., WAGNER, J.F., WILMSEN, C.W., and WILLIAMS, R.H.: 'Physics and chemistry of IU-V compound semiconductor interfaces' (Plenum Press, New York, 1985), Chaps. 4, 6, 3 and 1
2. -2 range', Appl. Phys. Lett., 1993, 62, (23), pp. 2977-2979
3. 0.47 metal-insulator-semiconductor capacitors', Appl. Phys. Lett., 1992, 61, (15), pp. 1826-1828
4. 0.47 depletion-mode metalinsulator-semiconductor field-effect', Appl. Phys. Lett., 1993, 62, (25), pp. 3291-3293
5. SUZUKI S., KODAMA S. and HASEGAWA H.: 'A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor', Solid State Electron., 1995, 38, (9), pp. 1679-1683
6. 3 films for electronic and optoelectronic applications', J. Appl. Phys., 1995, 77, (2), pp. 686-693
7. PASSLACK M., HONG M., MANNAERTS J.P., KWO J.R. and TU L.W.: 'Recombination velocity at oxide-GaAs interfaces by in-situ molecular-beam epitaxy', unpublished
8. PASSLACK M., HONG M., OPILA R.L., MANNAERTS J.P. and KWO J.R.: 'GaAs surface passivation using in-situ oxide deposition', unpublished
9. 3-GaAs structures fabricated by in-situ molecularbeam epitaxy', unpublished
10. 0.8As-GaAs quantum well structures', unpublished
11. HONG M.: 'New frontiers of molecular beam epitaxy with in-situ processing', J. Cryst. Growth. 1995, 150, pp. 277-284
12. LUDEKE R. and KOMA A.: 'Surface studies on clean and oxygen exposed GaAs and Ge surfaces by low energy electron loss spectroscopy', CRC CRC. Rev. Solid State Sci., 1975, 5, p. 259
13. HONG M., PASSLACK M., MANNAERTS J.P., KWO J., CHU S.N.G., MORIYA N., HOU S.Y. and FRATELLO V.J.: unpublished
14. LUNDSTROM M.S. and SCHUELKE R.J.: 'Numerical analysis of heterostructure semiconductor devices', IEEE Trans., 1983, ED-30, (9), pp. 1151-1159