High temperature NO annealing of deposited SiO2 and SiON films on N-type 4H-SiC

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 685-688

  Yano, H ^a   Hatayama, T ^a   Uraoka, Y ^a   Fuyuki, T ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Deposited oxide; Interface state density; MOS; Nitridation; NO annealing; Oxynitride

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SILICA; SILICON CARBIDE;

DEPOSITED OXIDE; INTERFACE STATE DENSITY; OXYNITRIDES;

THIN FILMS;

EID: 33746971508     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.685     Document Type: Conference Paper

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