An improved small-signal parameter-extraction algorithm for GaN HEMT devices

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 7, 2008, Pages 1535-1544

  Brady, Ronan G ^a,b   Oxley, Christopher H ^c   Brazil, Thomas J ^a,b  

^a IEEE

^b UNIVERSITY COLLEGE DUBLIN   (Ireland)

^c DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Gallium nitride (GaN); Heterojunction field effect transistor (HFET); High electron mobility transistor (HEMT); Parameter extraction; Small signal modeling

Indexed keywords

BOOLEAN FUNCTIONS; DELAY CIRCUITS; ELECTRIC NETWORK TOPOLOGY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; TOPOLOGY;

CIRCUIT TOPOLOGIES; EQUIVALENT-CIRCUIT PARAMETERS; EXTRACTION ALGORITHMS; FORWARD BIAS; GAN HEMT; HIGHLY EFFICIENT; INTRINSIC ELEMENTS; OUTPUT CONDUCTANCE; SMALL SIGNALS;

PARAMETER ESTIMATION;

EID: 47649108736     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.925212     Document Type: Article

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