Accurate small-signal modeling of FD-SOI MOSFETs

IEICE Transactions on Electronics

Volumn E89-C, Issue 4, 2006, Pages 517-519

  Kim, Guechol ^a   Shimizu, Yoshiyuki ^a   Murakami, Bunsei ^a   Goto, Masaru ^a   Ueda, Keisuke ^a   Kihara, Takao ^a   Matsuoka, Toshimasa ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

FD SOI; Modeling; MOSFET; Non quasi static; RF

Indexed keywords

COMPUTER SIMULATION; CURVE FITTING; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SIGNAL PROCESSING; SILICON ON INSULATOR TECHNOLOGY;

FULLY DEPLETED SILICON-ON-INSULATORS (FD-SOI); MODELING; NON-QUASI-STATIC; RF;

MOSFET DEVICES;

EID: 33646272410     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.4.517     Document Type: Article

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