0.1-μm gate-length AlInAs/GaInAs/GaAs MODFET MMIC process for applications in high-speed wireless communications

Hewlett-Packard Journal

Volumn 49, Issue 1, 1998, Pages 37-38

  Rohdin, Hans ^a   Nagy, Avelina ^a   Robbins, Virginia ^a   Su, Chung Yi ^a   Wakita, Arlene S ^a   Seeger, Judith ^a   Hwang, Tony ^a   Chye, Patrick ^a   Gregory, Paul E ^a   Bahl, Sandeep R ^a   Kellert, Forrest G ^a   Studebaker, Lawrence G ^a   D'Avanzo, Donald C ^a   Johnsen, Sigurd ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE ELECTRONIC EQUIPMENT; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; PERSONAL COMMUNICATION SYSTEMS; RADAR; RADIO COMMUNICATION; RADIO RECEIVERS; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

AUTOMOBILE RADAR; HIGH FREQUENCY SIGNAL; MODULATION DOPED FIELD EFFECT TRANSISTORS; WIRELESS MILLIMETER WAVE COMMUNICATIONS;

FIELD EFFECT TRANSISTORS;

EID: 0032001817     PISSN: 00181153     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (0)