Direct extraction of LDMOS small signal parameters from off-state measurements

Electronics Letters

Volumn 36, Issue 23, 2000, Pages 1964-1966

  Gaddi, R ^a   Tasker, P J ^a   Pla, J A ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; INDUCTANCE MEASUREMENT; MOSFET DEVICES; POWER AMPLIFIERS;

SMALL SIGNAL PARAMETER EXTRACTION;

RADIO SYSTEMS;

EID: 0034319495     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001345     Document Type: Article

References (3)

1. DAMBRINE, G., CAPPY, A., HELIODORE, F., and PLAYEZ, E.: 'A new method for determining the FET small-signal equivalent circuit', IEEE Trans. Microw. Theory Techn., 1988, 36, (7), pp. 1151-1159
2. LOVELACE, D., COSTA, J., and CAMILLERI, N.: 'Extracting small-signal model parameters of silicon MOSFET transistors'. IEEE MTT-S Int. Microw. Symp. Dig., 1994, Vol. 2, pp. 865-868
3. CURTICE, W.R., PLA, J.A., BRIDGES, D., LIANG, T., and SHUMATE, E.E.: 'A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs'. IEEE MTT-S Int. Microw. Symp. Dig., 1999, Vol. 2, pp. 419-422