A low gate bias model extraction technique for AlGaN/GaN HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 7, 2006, Pages 2949-2952

  Chen, Guang ^b   Kumar, Vipan ^b   Schwindt, Randal S ^c   Adesida, Ilesanmi ^a,b  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c UNION UNIVERSITY   (United States)

Author keywords

Gallium nitride (GaN) high electron mobility transistor (HEMT); Small signal modeling

Indexed keywords

GALLIUM-NITRIDE (GAN) HIGH ELECTRON-MOBILITY TRANSISTOR (HEMT); HIGH GATE VOLTAGE; SMALL-SIGNAL EQUIVALENT CIRCUIT; SMALL-SIGNAL MODELING;

CIRCUIT THEORY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDE; GATES (TRANSISTOR); SIGNAL PROCESSING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33746453817     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.877047     Document Type: Article

References (8)

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