A preliminary study of different metrics for the validation of device and behavioral models

65th ARFTG Microwave Measurements Conference Digest 2005

Volumn , Issue , 2005, Pages 71-78

  Pirazzini, Massimo ^a   Fernández, Guillermo ^b   Alabadelah, Ahmed ^c   Vannini, Giorgio ^a   Barciela, Monica ^b   Sánchez, Enrique ^b   Schreurs, Dominique ^c  

^a UNIVERSITY OF FERRARA   (Italy)

^b UNIVERSITY OF VIGO   (Spain)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Behavioral models; Device models; Metrics; Model accuracy; Model comparison

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; COMPUTER AIDED DESIGN; HETEROJUNCTION BIPOLAR TRANSISTORS; MOSFET DEVICES; QUALITY CONTROL; SCATTERING PARAMETERS; SYSTEMS ANALYSIS;

BEHAVIORAL MODELS; DEVICE MODELS; METRICS; MODEL ACCURACY; MODEL COMPARISON;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 33745227385     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTGS.2005.1500571     Document Type: Conference Paper

References (5)

1. T. Kacprzak and A. Materka, "Compact DC Model of GaAs FET's for Large-Signal Computer Calculation", IEEE Journal of Solid-State Circuits, Vol. SC-18, pp. 211-213, April 1983.
2. J.Staudinger, M.Golio, C.Woodin and M.C. de Baca, "Considerations for Improving the Accuracy of Large-Signal GaAs MESFET Models to Predict Power Amplifier Circuit Performance", IEEE Journal of Solid-State Circuits, March 1994.
3. M. Miller, M. Golio, B. Beckwith, E. Arnold, D. Halchin, S. Ageno and S. Dorn, "Choosing an Optimum Large-Signal Model for GaAs MESFETs", IEEE MTT-S Digest, Vol. 3, pp. 1275-1282, May 8-10 1990.
4. C. Baylis, L. Dunleavy and A.D. Snider, "The Normalized Difference Unit as a Metric For Comparing IV Curves" IEEE ARFTG Microwave Measurements Conference, pp. 93-100, December 2004.
5. K. Remley, J. Jargon, D. Schreurs, D. DeGroot, and K.C. Gupta, "Repeat measurements and metrics for nonlinear model development", IEEE International Microwave Symposium, Seattle, USA, pp. 2169-2172, 2-7 June 2002.