Improved RF modeling techniques for enhanced AlGaN/GaN HFETs

IEEE Microwave and Wireless Components Letters

Volumn 13, Issue 4, 2003, Pages 140-142

  Nuttinck, S ^a   Gebara, E ^a   Laskar, J ^a   Shealy, J ^b   Harris, M ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

AlGaN GaN HFETs; Nonlinear modeling; Small signal modeling

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; MATHEMATICAL MODELS; NONLINEAR NETWORKS; SEMICONDUCTING ALUMINUM COMPOUNDS;

SMALL SIGNAL MODELING;

FIELD EFFECT TRANSISTORS;

EID: 0037398770     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2003.811062     Document Type: Article

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