A new pinched-off cold-FET method to determine parasitic capacitances of FET equivalent circuits

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 8, 2001, Pages 1410-1418

  Lai, Yeong Lin ^a,b   Hsu, Kuo Hua ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Cold FET; HEMT; HFET; MESFET; Parasitic capacitance

Indexed keywords

DEPLETION LAYERS; PARASITIC CAPACITANCES;

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; FREQUENCY RESPONSE; GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS; MESFET DEVICES; MICROWAVE CIRCUITS; REGRESSION ANALYSIS; SCATTERING PARAMETERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035417050     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.939921     Document Type: Conference Paper

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