High mobility thin film transistors by Nd:YVO4-laser crystallization

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 143-146

  Helen, Y ^a   Dassow, R ^b   Nerding, M ^c   Mourgues, K ^a   Raoult, F ^a   Kohler J R ^a   Mohammed Brahim, T ^a   Rogel, R ^a   Bonnaud, O ^a   Werner, J H ^b   Strunk, H P ^c  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; CRYSTALLIZATION; LASER APPLICATIONS; NEODYMIUM LASERS;

LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0035246915     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01586-8     Document Type: Article

References (5)

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3. R. Dassow, J.R. Köhler, M. Nerding, H.P. Strunk, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, J.H. Werner, Mater. Res. Soc. Symp. Proc. 621 (in press).
4. Helen Y., Mourgues K., Raoult F., Mohammed-Brahim T., Bonnaud O., Rogel R., Prochasson S., Boher P., Zahorski D. Thin Solid Films. 337:1999;133.
5. Werner J.H. Institue Phys. Conf. Ser. 104:1989;63.