Monitoring explosive crystallization phenomenon of amorphous silicon thin films during short pulse duration XeF excimer laser annealing using real-time optical diagnostic measurements

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 1651-1657

  Kuo, Chil Chyuan ^a,b   Yeh, Wen Chang ^a   Chen, Jia Bin ^a   Jeng, Jeng Ywan ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Excimer laser annealing; Explosive crystallization phenomenon; Optical diagnostic measurements; Silicon thin films

Indexed keywords

AMORPHOUS FILMS; CRYSTALLIZATION; IRRADIATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EXCIMER LASER ANNEALING; EXPLOSIVE CRYSTALLIZATION PHENOMENON; OPTICAL DIAGNOSTIC MEASUREMENTS; SILICON THIN FILMS;

THIN FILMS;

EID: 33750820704     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.05.046     Document Type: Article

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