Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 200-202

  Kim, Sung Ki ^a   Cho, Se Il ^a   Choi, Young Jin ^a   Cho, Kyu Sik ^c   Pietruszko, S M ^b   Jang, Jin ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Kyung Hee University   (South Korea)

^c NONE

Author keywords

Amorphous silicon; Plasma deposition; Thin film transistor

Indexed keywords

EID: 0346836929     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(98)01380-7     Document Type: Article

References (4)

1. M.A. Lieberman, A.J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, Wiley, New York, 1994, Chapter 12.
2. P.G. LeComber, W.E. Spear, A. Gaith, Electron. Lett. 15 (1979) 179.
3. M. Le Contellec, F. Maurice, J. Richard, B. Vinouze, F. Richou, J. Non-Cryst. Solids 97/98 (1987) 297.
4. S.P. Murarka, Metallization: Theory and Practice for VLSI and ULSI, Butterworth-Heinemann, Boston, MA, 1993, Chapter 2.