Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Journal of Crystal Growth

Volumn 270, Issue 3-4, 2004, Pages 351-358

  Ng, Tien Khee ^a   Yoon, Soon Fatt ^a   Loke, Wan Khai ^a   Wicaksono, Satrio ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Atomic force microscopy; A1. Optical microscopy; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

NITROGEN PLASMA; PHOTOLUMINESCENCE (PL) MECHANISMS; QUATERNARY COMPOUND SEMICONDUCTORS; SEMICONDUCTING III-V MATERIALS;

ATOMIC FORCE MICROSCOPY; CAVITY RESONATORS; NITRIDES; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; THERMAL EFFECTS; VACUUM;

MOLECULAR BEAM EPITAXY;

EID: 4544345093     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.002     Document Type: Article

References (37)

1. X. Yang, J.B. Heroux, M.J. Jurkovic, W.I. Wang, J. Vac. Sci. Technol. B 17 (3) (1999) 1144.
2. H. Saito, T. Makimoto, N. Kobayashi, J. Crystal Growth 195 (1998) 416.
3. N. Tansu, L.J. Mawst, IEEE Photon. Technol. Lett. 14 (4) (2002) 444.
4. S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim, J.S. Harris Jr., J.Crystal Growth 251 (2003) 367.
5. W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim, J.S. Harris Jr., IEEE J. Quantum Electron. 38 (9) (2002) 1260.
6. M. Fischer, D. Gollub, M. Reinhardt, M. Kamp, A. Forchel, J. Crystal Growth 251 (2003) 353.
7. W. Li, T. Jouhti, C.S. Peng, J. Konttinen, P. Laukkanen, Appl. Phys. Letts. 79 (21) (2001) 3386.
8. X. Yang, J.B. Heroux, M.J. Jurkovic, W.I. Wang, J. Vac. Sci. Technol. B 18 (3) (2000) 1484.
9. T. Kitatani, K. Nakahara, M. Kondow, K. Uomi, T. Tanaka, Jpn. J. Appl. Phys. 39 (2000) L86.
10. X. Yang, J.B. Heroux, M.J. Jurkovic, W.I. Wang, Appl. Phys. Letts. 76 (7) (2000) 795.
11. X. Yang, J.B. Heroux, M.J. Jurkovic, W.I. Wang, Appl. Phys. Letts. 75 (2) (1999) 178.
12. A.Y. Egorov, D. Bernklau, D. Livshits, V. Ustinov, Z.I. Alferov, H. Riechert, Electron. Letts. 35 (19) (1999) 1643.
13. D.E. Mars, D.I. Babic, Y. Kaneko, Y.-L. Chang, S. Subramanya, J. Kruger, P. Perlin, E.R. Weber, J. Vac. Sci. Technol. 17 (3) (1999) 1272.
14. J.S. Harris Jr., Semicond. Sci. Technol. 17 (2002) 880.
15. H. Riechert, A. Ramakrishnan, G. Steinle, Semicond. Sci. Technol. 17 (2002) 892.
16. D. Gotthold, S. Govindaraju, J. Reifsnider, G. Kinsey, J. Campbell, J. Vac. Sci. Teehnol. B 19 (4) (2001) 1400.
17. J.B. Heroux, X. Yang, W.I. Wang, Appl. Phys. Letts. 75 (18) (1999) 2716.
18. W.J. Fan, S.T. Ng, S.F. Yoon, M.F. Li, T.C. Chong, J. Appl. Phys. 93 (9) (2003) 5836.
19. W.J. Fan, S.F. Yoon, J. Appl. Phys. 90 (2) (2001) 843.
20. L. Beilaiche, Appl. Phys. Letts. 75 (17) (1999) 2578.
21. P. Perlin, P. Wisniewski, C. Skierbiszewski, T. Suski, E. Kaminska, D.E. Mars, W. Walukiewicz, Appl. Phys. Letts. 76 (10) (2000) 1279.
22. G. Sek, K. Ryczko, J. Misiewicz, M. Fischer, M. Reinhardt, A. Forchel, Thin Solid Films 380 (2000) 240.
23. S. Mazzucato, N. Balkan, A. Teke, A. Erol, R.J. Potter, M.C. Arikan, X. Marie, C. Fontaine, H. Carrere, E. Bedel, G. Lacoste, J. Appl. Phys. 93 (5) (2003) 2440.
24. L. Bellaiche, Appl. Phys. Letts. 75 (17) (1999) 2578.
25. W. Shan, K.M. Yu, W. Walukiewicz, J.W. Ager III, E.E. Haller, M.C. Ridgway, Appl. Phys. Letts. 75 (10) (1999) 1410.
26. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Kurtz, J. Appl. Phys. 86 (4) (1999) 2349.
27. S. Francoeur, S.A. Nikishin, C. Jin, Y. Qiu, H. Temkin, Appl. Phys. Letts. 75 (11) (1999) 1538.
28. I. Suemune, K. Uesugi, Appl. Phys. Letts. 77 (19) (2000) 3021.
29. T.K. Ng, S.F. Yoon, S.Z. Wang, W.K. Loke, W.J. Fan, J. Vac. Sci. Technol. B 20 (3) (2002) 964.
30. T.K. Ng, S.F. Yoon, W.J. Fan, W.K. Loke, S.Z. Wang, S.T. Ng, J. Vac. Sci. Technol. B 21 (6) (2003) 2324.
31. T.K. Ng, S.F. Yoon, S.Z. Wang, L.-H. Lin, Y. Ochiai, T. Matsusue, J. Appl. Phys. 94 (5) (2003) 3110.
32. I. Suemune, K. Uesugi, T.-Y. Seong, Semicond. Sci. Technol. 17 (2002) 755.
33. S.A. Lourenco, I.F.L. Dias, L.C. Pocas, J.L. Duarte, J.B.B. de Oliveira, J.C. Harmand, J. Appl. Phys. 93 (8) (2003) 4475.
34. X.D. Luo, Z.Y. Xu, W.K. Ge, Z. Pan, L.H. Li, Y.W. Lin, Appl. Phys. Lett. 79 (7) (2001) 958.
35. K. Uesugi, I. Suemune, T. Hasegawa, T. Akutagawa, T. Nakamura, Appl. Phys. Letts. 76 (10) (2000) 1285.
36. L. Largeau, C. Bondoux, G. Patriarche, C. Asplund, A. Fujioka, F. Salomonsson, M. Hammar, Appl. Phys. Lett. 79 (12) (2001) 1795.
37. R. Potter, S. Mazzucato, B. Balkan, M.J. Adams, P.R. Chalker, T.B. Joyce, T.J. Bullough, Superlattices Microstruct 29 (2) (2001) 169.