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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1400-1403

Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes

(6) Gotthold, David a Govindaraju, Sridhar a Reifsnider, Jason a Kinsey, Geoff a Campbell, Joe a Holmes Jr , Archie a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; BAND STRUCTURE; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTODIODES; QUANTUM EFFICIENCY; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BAND GAP; DARK CURRENT;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035535292 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1379792 Document Type: Conference Paper

Times cited : (6)

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