High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1484-1487

  Yang, X ^a   Heroux, J B ^a   Jurkovic, M J ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ACTIVE AGENTS;

INDIUM GALLIUM ARSENIC NITRIDE;

QUANTUM WELL LASERS;

EID: 0034187373     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591409     Document Type: Article

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