Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01

Applied Physics Letters

Volumn 76, Issue 10, 2000, Pages 1279-1281

  Perlin, Piotr ^a   Wiśniewski, Przemek ^a   Skierbiszewski, Czesław ^a   Suski, Tadeusz ^a   Kamińska, Eliana ^b   Subramanya, Sudhir G ^c   Weber, Eicke R ^c   Mars, Dan E ^d   Walukiewicz, Wladek ^e  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d HEWLETT PACKARD LABORATORIES   (United States)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001058740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126008     Document Type: Article

References (10)

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