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Volumn 75, Issue 11, 1999, Pages 1538-1540

Excitons bound to nitrogen clusters in GaAsN

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000429263     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124748     Document Type: Article
Times cited : (94)

References (11)
  • 3
    • 0042838746 scopus 로고
    • Physics of Semiconductors, edited by J. D. Chadi and W. A. Harrison Springer, New York
    • D. J. Wolford, J. A. Bradley, K. Fry, and J. Thompson, The Isoelectronic Trap in GaAs, in Physics of Semiconductors, edited by J. D. Chadi and W. A. Harrison (Springer, New York, 1984), p. 627.
    • (1984) The Isoelectronic Trap in GaAs , pp. 627
    • Wolford, D.J.1    Bradley, J.A.2    Fry, K.3    Thompson, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.