Photoluminescence quenching mechanisms in GaInNaS/GaAs quantum well grown by solid source molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2324-2328

  Ng, T K ^a   Yoon, S F ^a   Fan, W J ^a   Loke, W K ^a   Wang, S Z ^a   Ng, S T ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC EXCITATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

ACTIVATION ENERGY MODELS; GROWTH TEMPERATURE; STATE CARRIERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0942289267     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1617284     Document Type: Article

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