Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3110-3114

  Ng, T K ^a   Yoon, S F ^a   Wang, S Z ^a   Lin, L H ^b   Ochiai, Y ^c   Matsusue, T ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^c CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LOCALIZATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0141633885     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1601297     Document Type: Article

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