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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 964-968

Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

(5) Ng, T K a Yoon, S F a Wang, S Z a Loke, W K a Fan, W J a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; HIGH TEMPERATURE EFFECTS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

DEFECT-ASSISTED DIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035998515 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1477425 Document Type: Conference Paper

Times cited : (24)

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