Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MB

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 240-242

  Sek, G ^a   Ryczko, K ^a   Misiewicz, J ^a   Fischer, M ^b   Reinhardt, M ^b   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

INDIUM GALLIUM ARSENIC NITRIDE; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034503710     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01514-5     Document Type: Article

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