1.5 μm GaInNAs(Sb) lasers grown on GaAs by MBE

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 367-371

  Bank, Seth ^a   Ha, Wonill ^a   Gambin, Vincent ^a   Wistey, Mark ^a   Yuen, Homan ^a   Goddard, Lynford ^a   Kim, Seongsin ^b   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitride arsenides; B2. Semiconducting quaternary alloys; B3. Laser diodes

Indexed keywords

ANTIMONY; CURRENT DENSITY; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP;

SEMICONDUCTOR LASERS;

EID: 0037380529     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02446-6     Document Type: Conference Paper

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