Impact of carbon concentration on 1f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Raoult, J ^a   Pascal, F ^a   Delseny, C ^a   Marin, M ^b   Deen, M J ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b STMICROELECTRONICS   (France)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CARBON; CURRENT DENSITY; MICROFLUIDICS; PROTON IRRADIATION; SIGNAL PROCESSING; TELEGRAPH; TRANSISTORS;

CARBON CONCENTRATIONS; HETERO JUNCTION; INPUT CURRENTS; LOW FREQUENCY NOISE (1/F NOISE); NOISE SPECTRUM; RANDOM TELEGRAPH SIGNAL (RTS) NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 45149119427     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2939252     Document Type: Article

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