A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

Journal of Applied Physics

Volumn 98, Issue 6, 2005, Pages

  Sibaja Hernandez, Arturo ^a,b   Decoutere, Stefaan ^a   Maes, Herman ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DIFFUSION MODELS; PROCESS SIMULATION PROGRAM; SIGEC HETEROJUNCTION BIPOLAR TRANSISTORS;

BORON; CARBON; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 26244462311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2060953     Document Type: Article

References (27)

1. H. Rücker, Tech. Dig. - Int. Electron Devices Meet. 2003, 5.3.1.
2. T. F. Meister, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Conference Proceeding), Toulouse, France, 28-30 September 2003, p. 103.
3. J.-S. Rieh, Tech. Dig. - Int. Electron Devices Meet. 2002, 771.
4. H. Rücker, Tech. Dig. - Int. Electron Devices Meet. 1999, 345.
5. R. F. Scholz, P. Werner, U. Gösele, and T. Y. Tan, Appl. Phys. Lett. 74, 392 (1999).
6. J. L. Ngau, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 90, 1768 (2001).
7. N. E. B. Cowern, B. Colombeau, F. Roozeboom, M. Hopstaken, H. Snijders, P. Meunier-Beillard, and W. Lech, Proceedings of 32nd European Solid-State Device Research Conference, edited by, G. Baccarani, E. Gnani, and, M. Rudan, Firenze, Italy, 24-26 September 2002, pp. 203-206.
8. N. E. B. Cowern, K. T. F. Janssen, G. F. A. van de Walle, and D. J. Gravesteijn, Phys. Rev. Lett. 65, 2434 (1990).
9. H. Rücker, B. Heinemann, W. Röpke, R. Kurps, D. Kruüger, G. Lippert, and H. J. Osten, Appl. Phys. Lett. 73, 1682 (1998).
10. N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, and W. B. de Boer, Phys. Rev. Lett. 72, 2585 (1994).
11. R. F. Lever, J. M. Bonar, and A. F. W. Willoughby, J. Appl. Phys. 83, 1988 (1998).
12. N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, and B. Freer, Phys. Rev. Lett. 71, 883 (1993).
13. P. Kou, J. L. Hoyt, J. F. Gibbons, J. E. Turner, and D. Lefforge, Mater. Res. Soc. Symp. Proc. 379, 373 (1995).
14. P. Kou, J. L. Hoyt, J. F. Gibbons, J. E. Turner, and D. Lefforge, Appl. Phys. Lett. 66, 580 (1995).
15. A. N. Larsen, Mater. Res. Soc. Symp. Proc. 532, 187 (1998).
16. E. Napolitani, D. De Salvador, R. Storti, A. Carnera, S. Mirabella, and F. Priolo, Phys. Rev. Lett. 93, 055901 (2004).
17. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. Lett. 23, 361 (1980).
18. N. E. B. Cowern and B. Colombeau, The Second Public FRENDTECH Workshop in E-MRS Spring Meeting, Strasbourg, France, 25 May 2004.
19. A. Sibaja-Hernandez, M. W. Xu, S. Decoutere, and H. Maes, Mater. Sci. Semicond. Process. 8, 115 (2005).
20. TSUPREM-4 computer code from Synopsys, Inc.
21. H. Bracht, N. A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995).
22. H. Bracht E. E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).
23. A. Ural, P. B. Griffin, and J. D. Plummer, Phys. Rev. Lett. 83, 3454 (1999).
24. R. C. Newman and J. Wakefield, J. Phys. Chem. Solids 19, 230 (1961).
25. A. K. Tipping and R. C. Newman, Semicond. Sci. Technol. 2, 315 (1987).
26. R. B. Fair, in Impurity Doping Processes in Silicon, edited by, F. F. Y. Wang, (North-Holland, Amsterdam, The Netherlands, 1981), p. 315.
27. A. K. Tipping and R. C. Newman, Semicond. Sci. Technol. 2, 389 (1987).