Charge transport in strained Si1-yCy and Si1-x-yGexCy alloys on Si(001)

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4977-4981

  Osten, H J ^a   Gaworzewski, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON CONTENT; CARBON EVAPORATION; CHARGE CARRIER DENSITY; CHARGE TRANSPORT; CONSTANT RATIO; ELECTRICALLY ACTIVE DEFECTS; GROWTH CONDITIONS; INTERSTITIALS; ROOM TEMPERATURE; SI(0 0 1); SMALL CONCENTRATION; SOURCE TEMPERATURE; STRAINED-SI; TEMPERATURE DEPENDENCIES;

CARRIER CONCENTRATION; DEFECTS; GALVANOMAGNETIC EFFECTS; GERMANIUM; HALL MOBILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON ALLOYS;

EID: 0001512309     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366364     Document Type: Article

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