230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 10, 2005, Pages 2025-2032

  Chevalier, Pascal ^a,b   Fellous, Cyril ^a,b   Rubaldo, Laurent ^a,b,f   Pourchon, Franck ^a,b,g   Pruvost, Sébastien ^a,b,c   Beerkens, Rudy ^a,d   Saguin, Fabienne ^a,b   Zerounian, Nicolas ^a,e,f   Barbalat, Benoît ^a,b   Lepilliet, Sylvie ^a,c,h   Dutartre, Didier ^a,b,i   Céli, Didier ^a,b   Telliez, Isabelle ^a,b,f   Gloria, Daniel ^a,b   Aniel, Frédéric ^a,e,f,j   Danneville, François ^a,c,h   Chantre, Alain ^a,b  

^a IEEE   (France)

^b STMICROELECTRONICS   (France)

^c INSTITUT D ELECTRONIQUE   (France)

^d STMICROELECTRONICS   (Canada)

^e UNIVERSITÉ PARIS SACLAY   (France)

^f STMicroelectronics ^*

^g Advanced BiCMOS Technologies

^h UNIV LILLE   (France)

ⁱ ORANGE LABS   (France)

^j IEF Research Team

more..

Author keywords

BiCMOS integrated circuits; Heterojunction bipolar transistors; Millimeter wave circuits; Optical communication

Indexed keywords

BICMOS INTEGRATED CIRCUITS; MILLIMETER-WAVE CIRCUITS; MONOCRYSTALLINE EMITTERS;

ARSENIC; CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; EMITTER COUPLED LOGIC CIRCUITS; EPITAXIAL GROWTH; MILLIMETER WAVES; OPTICAL COMMUNICATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 27844597797     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.852846     Document Type: Conference Paper

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