RTS noise in submicron SiGe epitaxial base bipolar transistors

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1585-1590

  Militaru, L ^a   Souifi, A ^a   Mouis, M ^a,b   Bremond G ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 16344393703     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00143-8     Document Type: Article

References (7)

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7. Deen MJ, Ilowsci J, Yang P. "Low frequecny noise in polysilicon-emitter bipolar junction transistors", J Appl Phys 1995;77:6278.