Comparison of low frequency noise in III-V and Si/SiGe HBTs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5113, Issue , 2003, Pages 133-146

  Pascal, F ^a   Jarrix, S G ^a   Delseny, C ^a   Penarier, A ^a   Chay, C ^a   Deen, M J ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

Comparison and localization of 1 f noise; Figure of merit; Generation recombination noise; Heterojunction bipolar transistors; InP and SiGe HBTs; Low frequency noise; SPICE model; Temperature effects

Indexed keywords

AMPLIFICATION; COMPUTER SIMULATION; CURRENT DENSITY; NONLINEAR SYSTEMS; THERMAL EFFECTS; WHITE NOISE;

GENERATION-RECOMBINATION NOISE; LORENTZIAN COMPONENTS; LOW FREQUENCY NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042825682     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.488966     Document Type: Conference Paper

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