Influence of carbon incorporation on the low frequency noise of Si/SiGe:C HBTs based on 0.25 μm BiCMOS technology

AIP Conference Proceedings

Volumn 780, Issue , 2005, Pages 257-260

  Benoit, P ^a,b   Raoult, J ^a   Delseny, C ^a   Pascal, F ^a   Vildeuil, J C ^b   Szelag, B ^b   Monroy, A ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b STMICROELECTRONICS   (France)

Author keywords

BiCMOS; Carbon; Low Frequency Noise; SiGe:C

Indexed keywords

EID: 33749487108     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036744     Document Type: Conference Paper

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