Selective SiGeC epitaxy by RTCVD for high performance self-aligned HBT

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 481-484

  Fellous, C ^a   Deleglise, F ^a   Talbot, A ^a   Dutartre, D ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SELF-ALIGNED;

EID: 84907698418     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256918     Document Type: Conference Paper

References (8)

1. J. S. Rieh et al., " SiGe HBTs with cut-off Frequency, of 350GHz", 2002 International Electron Device Meeting Technical Digest, San Francisco (CA), USA December 2002, pp 771-775
2. J. Bock et al., "high speed SiGe:C Bipolar Technology" 2001 International Electron Device Meeting Technical Digest, Washington, USA, December 2001, pp 344-347.
3. E. Ohue et al., " Self aligned, Heavily Boron doped SEG Sige HBT", First International SiGe Technology and Device Meeting (ISTDM2003) Technical Digest, Nagoya, Japan, January 2003, pp 55-57.
4. H, Rucker et a)., " Dopant Diffusion in C-doped Si and SiGe. Physical Model and Experimental Verification", 1999 international Electron Device Meeting Technical Digest, December 1999, pp 345-348.
5. K. Washio, "A 0. 2pm Self-aligned SiGe HBT featuring 107GHz FMAX and 6. 7 ps ECL", 1999 International Electron Device Meeting Technical Digest, December 1999, pp 557-560.
6. P. Chevalier et al., "180GHz ft and fmax self-aligned SiGeC HBT using selective epitaxial growth of the base", submitted to ESSDERC 2003, September 2003.
7. P. Zaumseil et al., " X-ray Diffraction Studies of the influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices", Solid State Phenomena, Vol. 69-70, 1999, pp 203-208.
8. D. Knoll et al., " Comparison of SiGe and SiGe :C heterojonction bipolar transistors", Thin solid films. Vol. 369,2000, pp 342-346.