Theory of microplasma fluctuations and noise in silicon diode in avalanche breakdown

Journal of Applied Physics

Volumn 101, Issue 6, 2007, Pages

  Marinov, Ognian ^a   Deen, M Jamal ^a   Tejada, Juan Antonio Jimenez ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC SURGES; SEMICONDUCTOR JUNCTIONS; SILICON; SPURIOUS SIGNAL NOISE; SWITCHING NETWORKS;

AVALANCHE BREAKDOWN; CURRENT FLUCTUATION; MICROPLASMA PHENOMENON; SEMICONDUCTOR PROPERTIES;

AVALANCHE DIODES;

EID: 34047138862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2654973     Document Type: Article

References (40)

1. K. G. McKay, Phys. Rev. 94, 877 (1954).
2. A. G. Chynoweth and K. G. McKay, Phys. Rev. 102, 369 (1956).
3. K. S. Champlain, J. Appl. Phys. 30, 1039 (1959).
4. W. Shockley, Solid-State Electron. 2, 35 (1961).
5. R. J. McIntyre, J. Appl. Phys. 32, 983 (1961).
6. R. H. Haitz, Bull. Am. Phys. Soc. 7, 536 (1962).
7. R. H. Haitz, A. Goetzberger, R. M. Scarlett, and W. Shockley, J. Appl. Phys. 34, 1581 (1963).
8. A. Goetzberger, B. McDonald, R. H. Haitz, and R. M. Scarlett, J. Appl. Phys. 34, 1591 (1963).
9. R. H. Haitz, J. Appl. Phys. 35, 1370 (1964).
10. N. Ellouze, J. C. Hoffmann, and B. Lacaze, J. Appl. Phys. 49, 297 (1978).
11. R. J. McIntyre, IEEE Trans. Electron Devices ED-13, 164 (1966).
12. V. Mikolaj, J. Belan, K. Vojtechovsky, and F. Strapko, Solid-State Electron. 32, 983 (1989).
13. A. M. Zaklikiewicz, Solid-State Electron. 43, 11 (1999).
14. P. G. Neudeck, W. Huang, and M. Dudley, Solid-State Electron. 42, 2157 (1998).
15. H.-J. Schulze and B. O. Kolbesen, Solid-State Electron. 42, 2187 (1998).
16. S.-J. Hong, J.-J. Kim, Y. J. Park, and H. S. Min, IEEE Trans. Electron Devices 46, 230 (1999).
17. S. Wang, Fundamentals of Semiconductor Theory and Device Physics (Prentice-Hall, Englewood Cliffs, NJ, 1989).
18. M. S. Tyagi, Introduction to Semiconductor Materials and Devices (Wiley, New York, 1991).
19. P. A. Blakey, R. A. Giblin, and A. J. Seeds, IEEE Trans. Electron Devices 26, 1718 (1979).
20. P. A. Blakey, Solid-State Electron. 27, 751 (1984).
21. R. J. McIntyre, IEEE Trans. Electron Devices 46, 1623 (1999).
22. P. Yuan, K. A. Anselm, C. Hu, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, IEEE Trans. Electron Devices ED-46, 1632 (1999).
23. M. Kikuchi and K. Tachikawa, J. Phys. Soc. Jpn. 15, 835 (1960).
24. A. Ambrozy, Electronic Noise (Akademiai Kiado, Hungary/McGraw-Hill, New York, 1982).
25. S. T. Hsu, Solid-State Electron. 14, 487 (1971).
26. B. Senittzky and J. L. Moll, Phys. Rev. 110, 612 (1958).
27. A. G. Chynoweth and G. L. Pearson, J. Appl. Phys. 29, 1103 (1958).
28. K. F. Li, D. S. Ong, J. P. R. David, G. J. Rees, R. C. Tozer, P. N. Robson, and R. Grey, IEEE Trans. Electron Devices 45, 2102 (1998).
29. R. H. Haitz, IEEE Trans. Electron Devices 12, 198 (1965).
30. R. H. Haitz, IEEE Trans. Electron Devices 13, 342 (1966).
31. O. Marinov and M. J. Deen, Fluct. Noise Lett. 4, L287 (2004).
32. W. H. Card and P. K. Chaudhari, Proc. IEEE 53, 652 (1965).
33. H. T. Henderson and K. L. Ashley, Proc. IEEE 57, 1677 (1969).
34. P. L. Leonard and S. V. Jaskolski, Proc. IEEE 57, 1786 (1969).
35. S. T. Hsu, R. J. Whitter, and C. A. Mead, Solid-State Electron. 13, 1055 (1970).
36. A. Brambilla and A. Premoli, IEEE Electron Device Lett. 20, 405 (1999).
37. O. Marinov and M. J. Deen, Proceedings of ICNF, Gainesville, FL, 2001 (World Scientific, Singapore, 2001), pp. 187-192.
38. O. Marinov, M. J. Deen, V. Loukanov, V. Velikov, IEEE Trans. Electron Devices 49, 184 (2002).
39. O. Marinov, M. J. Deen, V. Loukanov, and V. Velikov, J. Appl. Phys. 91, 9232 (2002).
40. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).