Impact of technological parameters on the low frequency noise of advanced heterojunction bipolar transistors

AIP Conference Proceedings

Volumn 922, Issue , 2007, Pages 77-82

  Pascal, F ^a   Raoult, J ^a   Delseny, C ^a   Benoit, P ^a   Marin, M ^b   Deen, M J ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b STMICROELECTRONICS   (France)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

heterojunction bipolar transistor (HBT); low frequency noise; noise dispersion; noise magnitude; Si:SiGeC HBT; silicon bipolar transistor

Indexed keywords

EID: 78650562673     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2759640     Document Type: Conference Paper

References (11)

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