Origin of large-amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 541-543

  Pogany, D ^a   Chantre, A ^a   Chroboczek, J A ^a   Ghibaudo, G ^b  

^a ORANGE LABS   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001722257     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116393     Document Type: Article

References (27)

1. S. P. Joshi, R. Lahri, and C. Lage, in IEDM Tech. Dig. 182 (1987).
2. D. D.-L Tang and E. Hackbarth, IEEE Trans. Electron Devices INS ED-35, 2101 (1988).
3. J. D. Burnett and C. Hu, IEEE Trans. Electron Devices INS ED-35, 2238 (1988).
4. S. L. Kosier, A. Wei, R. D. Schrimpf, D. M. Fleetwood, M. D. DeLaus, R. L. Pease, and W. E. Combs, IEEE Trans. Electron Devices INS ED-42, 436 (1995).
5. C. J. Sun, D. K. Reinhard, T. A. Grotjohn, C. J. Huang, and C. C. W. Yu, IEEE Trans. Electron Devices INS ED-39, 2178 (1992).
6. A. Mounib, F. Balestra, G. Ghibaudo, N. Mathieu, J. Brini, A. Chovet, A. Chantre, and A. Nouailhat, in Proc. 24th ESSDERC'94, Edinburgh, UK (1994), p. 429.
7. H. A. W. Markus and T. G. M. Kleinpenning, IEEE Trans. Electron Devices INS ED-42, 720 (1995).
8. S. T. Hsu, R. J. Whittier, and C. A. Mead, Solid State Electron. INS 13, 1055 (1970).
9. M. J. Kirton and M. J. Uren, Adv. Phys. INS 38, 367 (1989).
10. A. Mounib, G. Ghibaudo, D. Pogany, and J. A. Chroboczek, in Proceedings of the 6th van der Ziel Symposium, University of Missouri, St. Louis, 1994 (AIP, New York, in press).
11. A. Neugroschel, C.-T. Sah, and M. S. Carroll, Appl. Phys. Lett. AIP 66, 2879 (1995).
12. J.-Q. Lü, S. Schöttl, E. Stefanov, F. Koch, R. Mahnkopf, and H. Klose, in Spring 1995 MRS Proc., San Francisco (1995), (in press).
13. C. J. Sun, T. A. Grotjohn, C.-T. Huang, D. K. Reinhard, and C.-C. W. Yu, IEEE Trans. Electron Devices INS ED-41, 787 (1994).
14. D. M. Fleetwood, P. S. Winokur, R. A. Reber, T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfeit, and L. C. Riewe, J. Appl. Phys. AIP 73, 5058 (1993).
15. G. I. Andersson, M. O. Andersson, and O. Engström, J. Appl. Phys. AIP 72, 2680 (1992).
16. D. Pogany, S. Ababou, G. Guillot, X. Hugon, B. Vilotitch, and C. Lenoble, Solid State Electron. INS 38, 37 (1995).
17. D. Pogany and G. Guillot, in Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f Fluctuations-ICNF'95, Palanga, Lithuania, 1995, p. 353.
18. R. A. Wachnik, T. J. Bucelot, and G. P. Li, J. Appl. Phys. AIP 63, 4734 (1988).
19. A. Chantre, G. Festes, G. Giroult-Matlakowski, and A. Nouailhat, IEEE Trans. Electron Devices INS ED-38, 1354 (1991).
20. H. Wurzer, R. Mahnkopf, and H. Klose, IEEE Trans. Electron Devices INS ED-41, 533 (1994).
21. C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE INS 45, 1228 (1957).
22. J. C. S. Woo, J. D. Plummer, and J. M. C. Stork, IEEE Trans. Electron Devices INS ED-34, 130 (1987).
23. G. A. M. Hurkx, IEEE Trans. Electron Devices INS ED-39, 331 (1992).
24. R. A. Schiebel, IEEE Trans. Electron Devices INS ED-41, 768 (1994).
25. K. R. Farmer and R. A. Buhrman, Semicond. Sci. Technol. INS 4, 1084 (1989).
26. N. Abakumov, V. I. Perel, and I. N. Yassievich, Sov. Phys. Semicond. INS 12, 1 (1978).
27. C. T. Sah and C. C. H. Hsu, in Properties of Silicon, Emis Datareviews Series No. 4 (INSPEC, London and New York, 1988), p. 532.