Low-frequency noise figures-of-merit in RF SiGe HBT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 179-182

  Tang, Jin ^a   Niu, Guofu ^a   Jin, Zhenrong ^a   Cressler, John D ^a   Zhang, Shiming ^a   Joseph, Alvin J ^a   Harame, David L ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC BREAKDOWN; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS; ULTRAHIGH VACUUM;

BIASING COLLECTOR CURRENT DENSITY; CORNER FREQUENCY; HIGH BREAKDOWN VOLTAGE; STANDARD BREAKDOWN VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036070459     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Current status and future trends of SiGe BiCMOS technology
2. Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors
3. Low-frequency noise properties of SiGe HBT's and application to ultra-low phase-noise oscillators
4. Review of low-frequency noise in bipolar transistors over the last decade
5. SiGe profile design tradeoffs for RF circuit applications
6. Noise modeling and SiGe profile design tradeoffs for RF applications