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Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4414-4421

Random telegraph signal noise in SiGe heterojunction bipolar transistors

(4) Von Haartman, Martin a Sandén, Martin a Östling, Mikael a Bosman, Gijs b

a ROYAL INSTITUTE OF TECHNOLOGY KTH (Sweden)

b J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BASE CURRENTS; BASE EMITTER JUNCTION; CAPTURE CROSS SECTIONS; HOLE CAPTURE; MODEL-BASED OPC; MULTIPHONON PROCESS; NONIDEAL; RANDOM TELEGRAPH SIGNAL NOISE; RECOMBINATION RATE; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; SPACE CHARGE REGIONS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED; THERMALLY ACTIVATED PROCESS; TRAPPED CARRIERS; TRAPPING/DETRAPPING;

ACTIVATION ENERGY; BIAS VOLTAGE;

TELEGRAPH;

EID: 18744393711 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1506197 Document Type: Article

Times cited : (20)

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