Low frequency noise behavior of polysilicon emitter bipolar junction transistors - A review

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5113, Issue , 2003, Pages 1-15

  Deen, M Jamal ^a,b   Pascal, Fabien ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIV MONTPELLIER   (France)

Author keywords

1 f noise in bipolar transistors; Figure of merit; Impact of technology on noise performance; Low frequency noise; Noise comparison; Noise in scaled devices; Polysilicon emitter bipolar junction transistors; Temperature effects

Indexed keywords

ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; LINEAR INTEGRATED CIRCUITS; MOSFET DEVICES; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

ANALOG INTEGRATED CIRCUITS; POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTOR; SMALL SIGNAL EQUIVALENT CIRCUIT;

SPURIOUS SIGNAL NOISE;

EID: 0041762524     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.488850     Document Type: Conference Paper

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