Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation

Applied Physics Letters

Volumn 70, Issue 23, 1997, Pages 3125-3127

  Lanzerotti, L D ^a   Sturm, J C ^a   Stach, E ^b   Hull, R ^b   Buyuklimanli, T ^c   Magee, C ^c  

^a Princeton University   (United States)

^b University of Virginia   (United States)

^c Evans East   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001093287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119110     Document Type: Article

References (12)

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