Interface characterization and current conduction in HfO 2 -gated MOS capacitors

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6112-6115

  Chen, H W ^a   Chiu, F C ^b   Liu, C H ^b   Chen, S Y ^a   Huang, H S ^a   Juan, P C ^c   Hwang, H L ^d  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b MING CHUAN UNIVERSITY   (Taiwan)

^c MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

HfO 2; High ; Interface traps density; Near interface oxide traps

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; HAFNIUM OXIDES; METALS; OXIDE SEMICONDUCTORS;

CURRENT CONDUCTION MECHANISMS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRON EFFECTIVE MASS; HFO2; INTERFACE CHARACTERIZATION; INTERFACE OXIDE; INTERFACE TRAPS; METAL-OXIDE- SEMICONDUCTORCAPACITORS;

MOS CAPACITORS;

EID: 45049087838     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.191     Document Type: Article

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