Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Tu, Chun Hao ^a   Chang, Ting Chang ^b,d   Liu, Po Tsun ^a   Chen, Chih Hung ^c   Yang, Che Yu ^a   Wu, Yung Chun ^a   Liu, Hsin Chuu ^a   Chang, Li Ting ^a   Tsai, Chia Chou ^a   Sze, Simon M ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ENHANCEMENT; ELECTRICAL STRESS; FLUORINE ION IMPLANTATION; PAD OXIDE;

CRYSTALLIZATION; DEPOSITION; ELECTRIC PROPERTIES; FLUORINE; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; STRESS ANALYSIS; THIN FILM TRANSISTORS;

POLYSILICON;

EID: 33750140530     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2214468     Document Type: Article

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