A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 213-216

  Jeon, J H ^a   Lee, M C ^a   Park, K C ^a   Jung, S H ^a   Han, M K ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DENSITY (SPECIFIC GRAVITY); EXCIMER LASERS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; LIQUID CRYSTAL DISPLAYS; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

EXCIMER LASER ANNEALING (ELA);

THIN FILM TRANSISTORS;

EID: 0034453366     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)