Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

IEEE Electron Device Letters

Volumn 24, Issue 8, 2003, Pages 512-514

  Chang, Kow Ming ^a   Yang, Wen Chih ^a   Tsai, Chiu Pao ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

N2O plasma oxynitride; Stack oxide; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS SILICON; DENSITY (SPECIFIC GRAVITY); DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; INTERFACES (MATERIALS); LOW TEMPERATURE PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

POLYSILICON THIN FILM TRANSISTOR; STACK GATE DIELECTRIC; TETRAETHYLORTHOSILICATE; ULTRATHIN OXYNITRIDE;

THIN FILM TRANSISTORS;

EID: 0041886628     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815155     Document Type: Article

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