Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 74-76

  Farmakis, F V ^a   Brini, J ^a   Kamarinos, G ^a   Dimitriadis, C A ^b  

^a Grenoble INP Phelma   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; GRAIN BOUNDARIES; HOT CARRIERS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

GATE OXIDES; STRESS DURATION;

THIN FILM TRANSISTORS;

EID: 0035249625     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902836     Document Type: Article

References (12)

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